IGP20N65F5XKSA1 vs IGP30N65F5XKSA1

Product Attributes

Part Number IGP20N65F5XKSA1 IGP30N65F5XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IGP20N65F5XKSA1 IGP30N65F5XKSA1
Product Status Active Active
IGBT Type Trench Trench
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 42 A 55 A
Current - Collector Pulsed (Icm) 60 A 90 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A 2.1V @ 15V, 30A
Power - Max 125 W 188 W
Switching Energy 160µJ (on), 60µJ (off) 280µJ (on), 70µJ (off)
Input Type Standard Standard
Gate Charge 48 nC 65 nC
Td (on/off) @ 25°C 20ns/165ns 19ns/170ns
Test Condition 400V, 10A, 32Ohm, 15V 400V, 15A, 23Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package PG-TO220-3 PG-TO220-3