IGO60R070D1AUMA1 vs IGOT60R070D1AUMA1

Product Attributes

Part Number IGO60R070D1AUMA1 IGOT60R070D1AUMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IGO60R070D1AUMA1 IGOT60R070D1AUMA1
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology GaNFET (Gallium Nitride) GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc) 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs - -
Vgs(th) (Max) @ Id 1.6V @ 2.6mA 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) -10V -10V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 400 V 380 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-DSO-20-85 PG-DSO-20-87
Package / Case 20-PowerSOIC (0.433", 11.00mm Width) 20-PowerSOIC (0.433", 11.00mm Width)