IGD15N65T6ARMA1 vs IGD10N65T6ARMA1

Product Attributes

Part Number IGD15N65T6ARMA1 IGD10N65T6ARMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IGD15N65T6ARMA1 IGD10N65T6ARMA1
Product Status Not For New Designs Not For New Designs
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 30 A 23 A
Current - Collector Pulsed (Icm) 57.5 A 42.5 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 11.5A 1.9V @ 15V, 8.5A
Power - Max 100 W 75 W
Switching Energy 230µJ (on), 110µJ (off) 200µJ (on), 70µJ (off)
Input Type Standard Standard
Gate Charge 37 nC 27 nC
Td (on/off) @ 25°C 30ns/117ns 30ns/106ns
Test Condition 400V, 11.5A, 47Ohm, 15V 400V, 8.5A, 47Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3 PG-TO252-3