| Part Number | IGB50N65S5ATMA1 | IGB20N65S5ATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - IGBTs - Single | Transistors - IGBTs - Single |
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|
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| Product Status | Active | Active |
| IGBT Type | Trench Field Stop | - |
| Voltage - Collector Emitter Breakdown (Max) | 650 V | - |
| Current - Collector (Ic) (Max) | 80 A | - |
| Current - Collector Pulsed (Icm) | 200 A | - |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 50A | - |
| Power - Max | 270 W | - |
| Switching Energy | 1.23mJ (on), 740µJ (off) | - |
| Input Type | Standard | - |
| Gate Charge | 120 nC | - |
| Td (on/off) @ 25°C | 20ns/139ns | - |
| Test Condition | 400V, 50A, 8.2Ohm, 15V | - |
| Reverse Recovery Time (trr) | - | - |
| Operating Temperature | -40°C ~ 175°C (TJ) | - |
| Mounting Type | Surface Mount | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - |
| Supplier Device Package | PG-TO263-3 | - |