| Part Number | IGB50N65S5ATMA1 | IGB50N65H5ATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - IGBTs - Single | Transistors - IGBTs - Single |
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| Product Status | Active | Active |
| IGBT Type | Trench Field Stop | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V | 650 V |
| Current - Collector (Ic) (Max) | 80 A | 80 A |
| Current - Collector Pulsed (Icm) | 200 A | 150 A |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 50A | 2.1V @ 15V, 50A |
| Power - Max | 270 W | 270 W |
| Switching Energy | 1.23mJ (on), 740µJ (off) | 1.59mJ (on), 750µJ (off) |
| Input Type | Standard | Standard |
| Gate Charge | 120 nC | 120 nC |
| Td (on/off) @ 25°C | 20ns/139ns | 23ns/173ns |
| Test Condition | 400V, 50A, 8.2Ohm, 15V | 400V, 50A, 12Ohm, 15V |
| Reverse Recovery Time (trr) | - | - |
| Operating Temperature | -40°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3 | PG-TO263-3 |