IGB10N60TATMA1 vs IGB30N60TATMA1

Product Attributes

Part Number IGB10N60TATMA1 IGB30N60TATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IGB10N60TATMA1 IGB30N60TATMA1
Product Status Active Active
IGBT Type NPT, Trench Field Stop Trench
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 20 A 60 A
Current - Collector Pulsed (Icm) 30 A 90 A
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 10A 2.05V @ 15V, 30A
Power - Max 110 W 187 W
Switching Energy 430µJ 1.46mJ
Input Type Standard Standard
Gate Charge 62 nC 167 nC
Td (on/off) @ 25°C 12ns/215ns 23ns/254ns
Test Condition 400V, 10A, 23Ohm, 15V 400V, 30A, 10.6Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2