IGP30N60H3XKSA1 vs IGB30N60H3XKSA1

Product Attributes

Part Number IGP30N60H3XKSA1 IGB30N60H3XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IGP30N60H3XKSA1 IGB30N60H3XKSA1
Product Status Active Active
IGBT Type Trench Field Stop -
Voltage - Collector Emitter Breakdown (Max) 600 V -
Current - Collector (Ic) (Max) 60 A -
Current - Collector Pulsed (Icm) 120 A -
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A -
Power - Max 187 W -
Switching Energy 1.17mJ -
Input Type Standard -
Gate Charge 165 nC -
Td (on/off) @ 25°C 18ns/207ns -
Test Condition 400V, 30A, 10.5Ohm, 15V -
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 175°C (TJ) -
Mounting Type Through Hole -
Package / Case TO-220-3 -
Supplier Device Package PG-TO220-3-1 -