IGB30N60H3ATMA1 vs IGB20N60H3ATMA1

Product Attributes

Part Number IGB30N60H3ATMA1 IGB20N60H3ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IGB30N60H3ATMA1 IGB20N60H3ATMA1
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 60 A 40 A
Current - Collector Pulsed (Icm) 120 A 80 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A 2.4V @ 15V, 20A
Power - Max 187 W 170 W
Switching Energy 1.17mJ 690µJ
Input Type Standard Standard
Gate Charge 165 nC 120 nC
Td (on/off) @ 25°C 18ns/207ns 16ns/194ns
Test Condition 400V, 30A, 10.5Ohm, 15V 400V, 20A, 14.6Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2 PG-TO263-3