IGB10N60TATMA1 vs IGP10N60TATMA1

Product Attributes

Part Number IGB10N60TATMA1 IGP10N60TATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IGB10N60TATMA1 IGP10N60TATMA1
Product Status Active Active
IGBT Type NPT, Trench Field Stop -
Voltage - Collector Emitter Breakdown (Max) 600 V -
Current - Collector (Ic) (Max) 20 A -
Current - Collector Pulsed (Icm) 30 A -
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 10A -
Power - Max 110 W -
Switching Energy 430µJ -
Input Type Standard -
Gate Charge 62 nC -
Td (on/off) @ 25°C 12ns/215ns -
Test Condition 400V, 10A, 23Ohm, 15V -
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 175°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB -
Supplier Device Package PG-TO263-3-2 -