IGB01N120H2ATMA1 vs IGB03N120H2ATMA1

Product Attributes

Part Number IGB01N120H2ATMA1 IGB03N120H2ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IGB01N120H2ATMA1 IGB03N120H2ATMA1
Product Status Last Time Buy Last Time Buy
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 3.2 A 9.6 A
Current - Collector Pulsed (Icm) 3.5 A 9.9 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 1A 2.8V @ 15V, 3A
Power - Max 28 W 62.5 W
Switching Energy 140µJ 290µJ
Input Type Standard Standard
Gate Charge 8.6 nC 22 nC
Td (on/off) @ 25°C 13ns/370ns 9.2ns/281ns
Test Condition 800V, 1A, 241Ohm, 15V 800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2