IAUC120N04S6L005ATMA1 vs IAUC120N04S6L008ATMA1

Product Attributes

Part Number IAUC120N04S6L005ATMA1 IAUC120N04S6L008ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IAUC120N04S6L005ATMA1 IAUC120N04S6L008ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tj) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.55mOhm @ 60A, 10V 0.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 2V @ 130µA 2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 177 nC @ 10 V 140 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 11203 pF @ 25 V 7910 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 187W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-53 PG-TDSON-8-33
Package / Case 8-PowerTDFN 8-PowerTDFN