IAUC100N04S6N028ATMA1 vs IAUC100N04S6N022ATMA1

Product Attributes

Part Number IAUC100N04S6N028ATMA1 IAUC100N04S6N022ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IAUC100N04S6N028ATMA1 IAUC100N04S6N022ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V 7V, 10V
Rds On (Max) @ Id, Vgs 2.86mOhm @ 50A, 10V 2.26mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3V @ 24µA 3V @ 32µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 39 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 25 V 2421 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 62W (Tc) 75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8 PG-TDSON-8
Package / Case 8-PowerTDFN 8-PowerTDFN