HGTP7N60A4 vs HGTP7N60A4D

Product Attributes

Part Number HGTP7N60A4 HGTP7N60A4D
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGTP7N60A4 HGTP7N60A4D
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 34 A 34 A
Current - Collector Pulsed (Icm) 56 A 56 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A 2.7V @ 15V, 7A
Power - Max 125 W 125 W
Switching Energy 55µJ (on), 60µJ (off) 55µJ (on), 60µJ (off)
Input Type Standard Standard
Gate Charge 37 nC 37 nC
Td (on/off) @ 25°C 11ns/100ns 11ns/100ns
Test Condition 390V, 7A, 25Ohm, 15V 390V, 7A, 25Ohm, 15V
Reverse Recovery Time (trr) - 34 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3