HGTP5N120CN vs HGTP2N120CN

Product Attributes

Part Number HGTP5N120CN HGTP2N120CN
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGTP5N120CN HGTP2N120CN
Product Status Active Obsolete
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 25 A 13 A
Current - Collector Pulsed (Icm) 40 A 20 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 5.5A 2.4V @ 15V, 2.6A
Power - Max 167 W 104 W
Switching Energy 400µJ (on), 640µJ (off) 96µJ (on), 355µJ (off)
Input Type Standard Standard
Gate Charge 75 nC 30 nC
Td (on/off) @ 25°C 22ns/180ns 25ns/205ns
Test Condition 960V, 5.5A, 25Ohm, 15V 960V, 2.6A, 51Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220AB TO-220-3