HGTG5N120BND vs HGTP5N120BND

Product Attributes

Part Number HGTG5N120BND HGTP5N120BND
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGTG5N120BND HGTP5N120BND
Product Status Last Time Buy Not For New Designs
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 21 A 21 A
Current - Collector Pulsed (Icm) 40 A 40 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 5A 2.7V @ 15V, 5A
Power - Max 167 W 167 W
Switching Energy 450µJ (on), 390µJ (off) 450µJ (on), 390µJ (off)
Input Type Standard Standard
Gate Charge 53 nC 53 nC
Td (on/off) @ 25°C 22ns/160ns 22ns/160ns
Test Condition 960V, 5A, 25Ohm, 15V 960V, 5A, 25Ohm, 15V
Reverse Recovery Time (trr) 65 ns 65 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-220-3
Supplier Device Package TO-247-3 TO-220-3