HGTP3N60A4D vs HGTP3N60A4

Product Attributes

Part Number HGTP3N60A4D HGTP3N60A4
Manufacturer Fairchild Semiconductor Harris Corporation
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGTP3N60A4D HGTP3N60A4
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 17 A 17 A
Current - Collector Pulsed (Icm) 40 A 40 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 3A 2.7V @ 15V, 3A
Power - Max 70 W 70 W
Switching Energy 37µJ (on), 25µJ (off) 37µJ (on), 25µJ (off)
Input Type Standard Standard
Gate Charge 21 nC 21 nC
Td (on/off) @ 25°C 6ns/73ns 6ns/73ns
Test Condition 390V, 3A, 50Ohm, 15V 390V, 3A, 50Ohm, 15V
Reverse Recovery Time (trr) 29 ns -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3