HGTP12N60C3 vs HGTP12N60C3D

Product Attributes

Part Number HGTP12N60C3 HGTP12N60C3D
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGTP12N60C3 HGTP12N60C3D
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 24 A 24 A
Current - Collector Pulsed (Icm) 96 A 96 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 12A 2.2V @ 15V, 15A
Power - Max 104 W 104 W
Switching Energy 380µJ (on), 900µJ (off) 380µJ (on), 900µJ (off)
Input Type Standard Standard
Gate Charge 48 nC 48 nC
Td (on/off) @ 25°C - -
Test Condition - -
Reverse Recovery Time (trr) - 40 ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3