HGTG30N60B3D vs HGTG30N60C3D

Product Attributes

Part Number HGTG30N60B3D HGTG30N60C3D
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGTG30N60B3D HGTG30N60C3D
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 60 A 63 A
Current - Collector Pulsed (Icm) 220 A 252 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A 1.8V @ 15V, 30A
Power - Max 208 W 208 W
Switching Energy 550µJ (on), 680µJ (off) 1.05mJ (on), 2.5mJ (off)
Input Type Standard Standard
Gate Charge 170 nC 162 nC
Td (on/off) @ 25°C 36ns/137ns -
Test Condition 480V, 30A, 3Ohm, 15V -
Reverse Recovery Time (trr) 55 ns 60 ns
Operating Temperature -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3