HGTG30N60B3 vs HGTG30N60B3D

Product Attributes

Part Number HGTG30N60B3 HGTG30N60B3D
Manufacturer Harris Corporation onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGTG30N60B3 HGTG30N60B3D
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 60 A 60 A
Current - Collector Pulsed (Icm) 220 A 220 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A 1.9V @ 15V, 30A
Power - Max 208 W 208 W
Switching Energy 500µJ (on), 680µJ (off) 550µJ (on), 680µJ (off)
Input Type Standard Standard
Gate Charge 170 nC 170 nC
Td (on/off) @ 25°C 36ns/137ns 36ns/137ns
Test Condition 480V, 30A, 3Ohm, 15V 480V, 30A, 3Ohm, 15V
Reverse Recovery Time (trr) - 55 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 TO-247-3