HGTG30N60A4D vs HGTG30N60A4

Product Attributes

Part Number HGTG30N60A4D HGTG30N60A4
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGTG30N60A4D HGTG30N60A4
Product Status Not For New Designs Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 75 A 75 A
Current - Collector Pulsed (Icm) 240 A 240 A
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 30A 2.6V @ 15V, 30A
Power - Max 463 W 463 W
Switching Energy 280µJ (on), 240µJ (off) 280µJ (on), 240µJ (off)
Input Type Standard Standard
Gate Charge 225 nC 225 nC
Td (on/off) @ 25°C 25ns/150ns 25ns/150ns
Test Condition 390V, 30A, 3Ohm, 15V 390V, 30A, 3Ohm, 15V
Reverse Recovery Time (trr) 55 ns -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3