HGTG20N60B3D vs HGTG20N60C3D

Product Attributes

Part Number HGTG20N60B3D HGTG20N60C3D
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGTG20N60B3D HGTG20N60C3D
Product Status Not For New Designs Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 40 A 45 A
Current - Collector Pulsed (Icm) 160 A 300 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A 1.8V @ 15V, 20A
Power - Max 165 W 164 W
Switching Energy 475µJ (on), 1.05mJ (off) 500µJ (on), 500µJ (off)
Input Type Standard Standard
Gate Charge 80 nC 91 nC
Td (on/off) @ 25°C - 28ns/151ns
Test Condition - 480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 55 ns 55 ns
Operating Temperature -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3