HGTG20N60B3D vs HGTG20N60B3

Product Attributes

Part Number HGTG20N60B3D HGTG20N60B3
Manufacturer onsemi Harris Corporation
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGTG20N60B3D HGTG20N60B3
Product Status Not For New Designs Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 40 A 40 A
Current - Collector Pulsed (Icm) 160 A 160 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A 2V @ 15V, 20A
Power - Max 165 W 165 W
Switching Energy 475µJ (on), 1.05mJ (off) 475µJ (on), 1.05mJ (off)
Input Type Standard Standard
Gate Charge 80 nC 80 nC
Td (on/off) @ 25°C - -
Test Condition - 480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 55 ns -
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247