HGTG18N120BN vs HGTG18N120BND

Product Attributes

Part Number HGTG18N120BN HGTG18N120BND
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGTG18N120BN HGTG18N120BND
Product Status Active Obsolete
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 54 A 54 A
Current - Collector Pulsed (Icm) 165 A 160 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 18A 2.7V @ 15V, 18A
Power - Max 390 W 390 W
Switching Energy 800µJ (on), 1.8mJ (off) 1.9mJ (on), 1.8mJ (off)
Input Type Standard Standard
Gate Charge 165 nC 165 nC
Td (on/off) @ 25°C 23ns/170ns 23ns/170ns
Test Condition 960V, 18A, 3Ohm, 15V 960V, 18A, 3Ohm, 15V
Reverse Recovery Time (trr) - 75 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3