HGTG11N120CND vs HGTG11N120CN

Product Attributes

Part Number HGTG11N120CND HGTG11N120CN
Manufacturer onsemi Fairchild Semiconductor
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGTG11N120CND HGTG11N120CN
Product Status Not For New Designs Obsolete
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 43 A 43 A
Current - Collector Pulsed (Icm) 80 A 80 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 11A 2.4V @ 15V, 11A
Power - Max 298 W 298 W
Switching Energy 950µJ (on), 1.3mJ (off) 400µJ (on), 1.3mJ (off)
Input Type Standard Standard
Gate Charge 100 nC 100 nC
Td (on/off) @ 25°C 23ns/180ns 23ns/180ns
Test Condition 960V, 11A, 10Ohm, 15V 960V, 11A, 10Ohm, 15V
Reverse Recovery Time (trr) 70 ns -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247