| Part Number | HGTG10N120BND | HGTG18N120BND |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors - IGBTs - Single | Transistors - IGBTs - Single |
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| Product Status | Last Time Buy | Obsolete |
| IGBT Type | NPT | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | 1200 V |
| Current - Collector (Ic) (Max) | 35 A | 54 A |
| Current - Collector Pulsed (Icm) | 80 A | 160 A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A | 2.7V @ 15V, 18A |
| Power - Max | 298 W | 390 W |
| Switching Energy | 850µJ (on), 800µJ (off) | 1.9mJ (on), 1.8mJ (off) |
| Input Type | Standard | Standard |
| Gate Charge | 100 nC | 165 nC |
| Td (on/off) @ 25°C | 23ns/165ns | 23ns/170ns |
| Test Condition | 960V, 10A, 10Ohm, 15V | 960V, 18A, 3Ohm, 15V |
| Reverse Recovery Time (trr) | 70 ns | 75 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 |
| Supplier Device Package | TO-247-3 | TO-247-3 |