HGT1S7N60C3D vs HGT1S7N60C3DS

Product Attributes

Part Number HGT1S7N60C3D HGT1S7N60C3DS
Manufacturer Fairchild Semiconductor Harris Corporation
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGT1S7N60C3D HGT1S7N60C3DS
Product Status Active Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 14 A 14 A
Current - Collector Pulsed (Icm) 56 A 56 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 7A 2V @ 15V, 7A
Power - Max 60 W 60 W
Switching Energy - 165µJ (on), 600µJ (off)
Input Type Standard Standard
Gate Charge 38 nC 23 nC
Td (on/off) @ 25°C - -
Test Condition - 480V, 7A, 50Ohm, 15V
Reverse Recovery Time (trr) 25 ns 37 ns
Operating Temperature -40°C ~ 150°C (TJ) -
Mounting Type Through Hole Surface Mount
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package I2PAK (TO-262) TO-263AB