HGT1S7N60C3D vs HGT1S3N60C3D

Product Attributes

Part Number HGT1S7N60C3D HGT1S3N60C3D
Manufacturer Fairchild Semiconductor Harris Corporation
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGT1S7N60C3D HGT1S3N60C3D
Product Status Active Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 14 A 6 A
Current - Collector Pulsed (Icm) 56 A 24 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 7A 2V @ 15V, 3A
Power - Max 60 W 33 W
Switching Energy - -
Input Type Standard Standard
Gate Charge 38 nC 13.8 nC
Td (on/off) @ 25°C - -
Test Condition - -
Reverse Recovery Time (trr) 25 ns -
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package I2PAK (TO-262) I2PAK (TO-262)