HGT1S12N60C3D vs HGT1S12N60C3DS

Product Attributes

Part Number HGT1S12N60C3D HGT1S12N60C3DS
Manufacturer Harris Corporation Fairchild Semiconductor
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
HGT1S12N60C3D HGT1S12N60C3DS
Product Status Active Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 24 A 24 A
Current - Collector Pulsed (Icm) 96 A 96 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A 2.2V @ 15V, 15A
Power - Max 104 W 104 W
Switching Energy - -
Input Type Standard Standard
Gate Charge 62 nC 71 nC
Td (on/off) @ 25°C - -
Test Condition - -
Reverse Recovery Time (trr) 40 ns 32 ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package I2PAK (TO-262) TO-263AB