Part Number | HGT1S12N60C3D | HGT1S12N60C3DS |
---|---|---|
Manufacturer | Harris Corporation | Fairchild Semiconductor |
Category | Transistors - IGBTs - Single | Transistors - IGBTs - Single |
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Product Status | Active | Active |
IGBT Type | - | - |
Voltage - Collector Emitter Breakdown (Max) | 600 V | 600 V |
Current - Collector (Ic) (Max) | 24 A | 24 A |
Current - Collector Pulsed (Icm) | 96 A | 96 A |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 15A | 2.2V @ 15V, 15A |
Power - Max | 104 W | 104 W |
Switching Energy | - | - |
Input Type | Standard | Standard |
Gate Charge | 62 nC | 71 nC |
Td (on/off) @ 25°C | - | - |
Test Condition | - | - |
Reverse Recovery Time (trr) | 40 ns | 32 ns |
Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Surface Mount |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | I2PAK (TO-262) | TO-263AB |