| Part Number | HGT1S10N120BNST | HGT1S10N120BNS |
|---|---|---|
| Manufacturer | onsemi | Fairchild Semiconductor |
| Category | Transistors - IGBTs - Single | Transistors - IGBTs - Single |
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| Product Status | Active | Active |
| IGBT Type | NPT | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | 1200 V |
| Current - Collector (Ic) (Max) | 35 A | 35 A |
| Current - Collector Pulsed (Icm) | 80 A | 80 A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A | 2.7V @ 15V, 10A |
| Power - Max | 298 W | 298 W |
| Switching Energy | 320µJ (on), 800µJ (off) | 320µJ (on), 800µJ (off) |
| Input Type | Standard | Standard |
| Gate Charge | 100 nC | 100 nC |
| Td (on/off) @ 25°C | 23ns/165ns | 23ns/165ns |
| Test Condition | 960V, 10A, 10Ohm, 15V | 960V, 10A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D²PAK (TO-263) | TO-263AB |