HFA3096BZ96 vs HFA3096B96

Product Attributes

Part Number HFA3096BZ96 HFA3096B96
Manufacturer Renesas Electronics America Inc Harris Corporation
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
HFA3096BZ96 HFA3096B96
Product Status Active Active
Transistor Type 3 NPN + 2 PNP 3 NPN + 2 PNP
Voltage - Collector Emitter Breakdown (Max) 12V, 15V 8V
Frequency - Transition 8GHz, 5.5GHz 8GHz, 5.5GHz
Noise Figure (dB Typ @ f) 3.5dB @ 1GHz 3.5dB @ 1GHz
Gain - -
Power - Max 150mW 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 2V / 20 @ 10mA, 2V 40 @ 10mA, 2V, 20 @ 10mA, 2V
Current - Collector (Ic) (Max) 65mA 65mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 16-SOIC (0.154", 3.90mm Width) 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package 16-SOIC 16-SOIC