HBDM60V600X-7 vs HBDM60V600W-7

Product Attributes

Part Number HBDM60V600X-7 HBDM60V600W-7
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
HBDM60V600X-7 HBDM60V600W-7
Product Status Active Obsolete
Transistor Type 1 NPN, 1 PNP (H-Bridge) NPN, PNP
Current - Collector (Ic) (Max) 600mA, 500mA 500mA, 600mA
Voltage - Collector Emitter Breakdown (Max) 60V, 80V 65V, 60V
Vce Saturation (Max) @ Ib, Ic 400mV @ 10mA, 100mA, 500mV @ 50mA, 500mA 400mV @ 10mA, 100mA, 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA, 50nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 10mA, 1V / 100 @ 150mA, 10V 100 @ 100mA, 1V / 100 @ 150mA, 10V
Power - Max 200mW 200mW
Frequency - Transition - 100MHz
Operating Temperature -55°C ~ 150°C -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363