| Part Number | HAT2279N-EL-E | HAT2279H-EL-E |
|---|---|---|
| Manufacturer | Renesas Electronics America Inc | Renesas Electronics America Inc |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Obsolete | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) | 30A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12.3mOhm @ 15A, 10V | 12mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | 60 nC @ 10 V |
| Vgs (Max) | - | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3520 pF @ 10 V | 3520 pF @ 10 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 25W (Tc) | 25W (Tc) |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | 8-LFPAK-iV | LFPAK |
| Package / Case | 8-PowerSOIC (0.154", 3.90mm Width) | SC-100, SOT-669 |