HAT2199R-EL-E vs HAT2197R-EL-E

Product Attributes

Part Number HAT2199R-EL-E HAT2197R-EL-E
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
HAT2199R-EL-E HAT2197R-EL-E
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 16.5mOhm @ 5.5A, 10V 6.7mOhm @ 8A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 4.5 V 18 nC @ 4.5 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 10 V 2650 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 2W (Ta) 2.5W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOP 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)