HAT2172N-EL-E vs HAT2173N-EL-E

Product Attributes

Part Number HAT2172N-EL-E HAT2173N-EL-E
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
HAT2172N-EL-E HAT2173N-EL-E
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 100 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta) 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 7.8mOhm @ 15A, 10V 15.3mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id - 6V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 61 nC @ 10 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 2420 pF @ 10 V 4350 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 20W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-LFPAK-iV 8-LFPAK-iV
Package / Case 8-PowerSOIC (0.154", 3.90mm Width) 8-PowerSOIC (0.154", 3.90mm Width)