HAT2170HWS-E vs HAT2173HWS-E

Product Attributes

Part Number HAT2170HWS-E HAT2173HWS-E
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
HAT2170HWS-E HAT2173HWS-E
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 100 V
Current - Continuous Drain (Id) @ 25°C 45A (Ta) 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V 8V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 22.5A, 10V 15mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 6V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V 61 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4650 pF @ 10 V 4350 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 30W (Tc)
Operating Temperature 150°C 150°C
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK LFPAK
Package / Case SC-100, SOT-669 SC-100, SOT-669