HAT2165N-EL-E vs HAT2165H-EL-E

Product Attributes

Part Number HAT2165N-EL-E HAT2165H-EL-E
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
HAT2165N-EL-E HAT2165H-EL-E
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 55A (Ta) 55A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 27.5A, 10V 3.3mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id - 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 4.5 V 33 nC @ 4.5 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 5180 pF @ 10 V 5180 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-LFPAK-iV LFPAK
Package / Case 8-PowerSOIC (0.154", 3.90mm Width) SC-100, SOT-669