HAT1125HWS-E vs HAT1127HWS-E

Product Attributes

Part Number HAT1125HWS-E HAT1127HWS-E
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
HAT1125HWS-E HAT1127HWS-E
Product Status Active Obsolete
FET Type - P-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 30 V
Current - Continuous Drain (Id) @ 25°C - 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs - 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id - 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 125 nC @ 10 V
Vgs (Max) - +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds - 5600 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - 30W (Tc)
Operating Temperature - 150°C
Mounting Type - Surface Mount
Supplier Device Package - LFPAK
Package / Case - SC-100, SOT-669