FZ1600R17HP4B2BOSA2 vs FZ1200R17HP4B2BOSA2

Product Attributes

Part Number FZ1600R17HP4B2BOSA2 FZ1200R17HP4B2BOSA2
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Modules Transistors - IGBTs - Modules
FZ1600R17HP4B2BOSA2 FZ1200R17HP4B2BOSA2
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Configuration Single Switch Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1700 V 1700 V
Current - Collector (Ic) (Max) 1600 A 1200 A
Power - Max 10500 W 7800 W
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 1.6kA 2.25V @ 15V, 1200A
Current - Collector Cutoff (Max) 5 mA 5 mA
Input Capacitance (Cies) @ Vce 130 nF @ 25 V 97 nF @ 25 V
Input Standard Standard
NTC Thermistor No No
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C
Mounting Type Chassis Mount Chassis Mount
Package / Case Module Module
Supplier Device Package A-IHV130-3 Module