FZ1200R12HE4HOSA2 vs FZ1200R17HE4HOSA2

Product Attributes

Part Number FZ1200R12HE4HOSA2 FZ1200R17HE4HOSA2
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Modules Transistors - IGBTs - Modules
FZ1200R12HE4HOSA2 FZ1200R17HE4HOSA2
Product Status Active Active
IGBT Type - -
Configuration - Single Switch
Voltage - Collector Emitter Breakdown (Max) - 1700 V
Current - Collector (Ic) (Max) - 1200 A
Power - Max - 7800 W
Vce(on) (Max) @ Vge, Ic - 2.3V @ 15V, 1200A
Current - Collector Cutoff (Max) - 5 mA
Input Capacitance (Cies) @ Vce - 97 nF @ 25 V
Input - Standard
NTC Thermistor - No
Operating Temperature - -40°C ~ 150°C
Mounting Type - Chassis Mount
Package / Case - Module
Supplier Device Package - Module