FQU1N60CTU vs FQU5N60CTU

Product Attributes

Part Number FQU1N60CTU FQU5N60CTU
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQU1N60CTU FQU5N60CTU
Product Status Last Time Buy Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 11.5Ohm @ 500mA, 10V 2.5Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25 V 670 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 28W (Tc) 2.5W (Ta), 49W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA