FQU10N20TU vs FQU12N20TU

Product Attributes

Part Number FQU10N20TU FQU12N20TU
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQU10N20TU FQU12N20TU
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 3.8A, 10V 280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V 910 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 51W (Tc) 2.5W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA