FQPF2N80 vs FQPF7N80

Product Attributes

Part Number FQPF2N80 FQPF7N80
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQPF2N80 FQPF7N80
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc) 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6.3Ohm @ 750mA, 10V 1.5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V 1850 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 35W (Tc) 56W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220F-3 TO-220F-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack