FQPF19N10L vs FQPF13N10L

Product Attributes

Part Number FQPF19N10L FQPF13N10L
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQPF19N10L FQPF13N10L
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 13.6A (Tc) 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 6.8A, 10V 180mOhm @ 4.35A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 5 V 12 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 25 V 520 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 38W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220F-3 TO-220F-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack