FQP5N30 vs FQP2N30

Product Attributes

Part Number FQP5N30 FQP2N30
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQP5N30 FQP2N30
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc) 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.7A, 10V 3.7Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 5 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V 130 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 70W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3