FQP4N20 vs FQP4N60

Product Attributes

Part Number FQP4N20 FQP4N60
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQP4N20 FQP4N60
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 600 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.8A, 10V 2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 25 V 670 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 45W (Tc) 106W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3