FQP19N20C vs FQP19N20

Product Attributes

Part Number FQP19N20C FQP19N20
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQP19N20C FQP19N20
Product Status Last Time Buy Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 19.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 9.5A, 10V 150mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 25 V 1600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 139W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3