FQI7N60TU vs FQI7N80TU

Product Attributes

Part Number FQI7N60TU FQI7N80TU
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQI7N60TU FQI7N80TU
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc) 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 3.7A, 10V 1.5Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1430 pF @ 25 V 1850 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.13W (Ta), 142W (Tc) 3.13W (Ta), 167W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK (TO-262) I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA