FQI4N20TU vs FQI4N20LTU

Product Attributes

Part Number FQI4N20TU FQI4N20LTU
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQI4N20TU FQI4N20LTU
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.8A, 10V 1.35Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 10 V 5.2 nC @ 5 V
Vgs (Max) ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 25 V 310 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.13W (Ta), 45W (Tc) 3.13W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK (TO-262) I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA