FQE10N20CTU vs FQE10N20LCTU

Product Attributes

Part Number FQE10N20CTU FQE10N20LCTU
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQE10N20CTU FQE10N20LCTU
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 2A, 10V 360mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 19 nC @ 5 V
Vgs (Max) ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V 490 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 12.8W (Tc) 12.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-126-3 TO-126-3
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3