FQD1N50TF vs FQD1P50TF

Product Attributes

Part Number FQD1N50TF FQD1P50TF
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQD1N50TF FQD1P50TF
Product Status Obsolete Obsolete
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 1.1A (Tc) 1.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9Ohm @ 550mA, 10V 10.5Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V 350 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc) 2.5W (Ta), 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63